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ShanXiZhongJuJingKe Semiconductor Co., Ltd

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HomeProductsSapphire Ingot120kg Sapphire Ingot120kg High hardness sapphire ingot
  • 120kg High hardness sapphire ingot

120kg High hardness sapphire ingot

Product Description

The crystals intended for use as TLD are grown in the form of calibrated rods by the Stepanov method in a strongly reducing medium. The rods are then cut into 1-mm-thick tablets with a diameter of 5 mm, after which their own background is measured. To make a set of detectors with a preset spread of sensitivity values, this testing should be preceded by irradiation with a known dose.

The corresponding data are entered into a computer and, if necessary, displayed; the accumulated doses are registered by a thermoluminescent analyzer.

The crystals grown in the strongly reducing medium mentioned above have a high density of F and F + centers, the ratio of which may vary from one sample to another. The neutral F centers are characterized by 6.05 eV absorption bands; those positively charged possess 4.8 and 5.4 eV bands.

Zhongju has break through the limitations of traditional crystals growth by Kyropoulos method, which is difficult to grow high-quality, large-size sapphire crystals. Currently 120kg high-quality sapphire crystals are produced stably, and the production capacity can satisfy the requirement of reliable supply. We have the ability to produce much larger crystal, if customer has corresponding request. The maximum diameter of substrate or components could reach up to 12 inches.

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Product Categories : Sapphire Ingot > 120kg Sapphire Ingot

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