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ShanXiZhongJuJingKe Semiconductor Co., Ltd

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HomeProductsSapphire Ingot100kg Sapphire Ingot100kg High hardness sapphire ingot

100kg High hardness sapphire ingot

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The upper boundary of crystal dimensions corresponds to the case when the photore-ceiver is connected to the crystal face perpendicular to incident radiation; it is calculated for the condition when the light from the most distant point exceeds the discrimination threshold (10 keV).  the upper boundary for different values of the absorp-tion coefficient K is shown by thin lines. The bold line denotes the lower boundary.


Zhongju has break through the limitations of traditional crystals growth by Kyropoulos method, which is difficult to grow high-quality, large-size sapphire crystals. Currently 120kg high-quality sapphire crystals are produced stably, and the production capacity can satisfy the requirement of reliable supply. We have the ability to produce much larger crystal, if customer has corresponding request. The maximum diameter of substrate or components could reach up to 12 inches.

100kg sapphire ingot


Product Categories : Sapphire Ingot > 100kg Sapphire Ingot

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HomeProductsSapphire Ingot100kg Sapphire Ingot100kg High hardness sapphire ingot
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